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Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

Thickness-modulated optical dielectric constants and band alignments of HfOx Ny gate dielectrics

(6) He, G a Zhang, L D a Liu, M a Zhang, J P a Wang, X J a Zhen, C M b

a INSTITUTE OF SOLID STATE PHYSICS (China)

b HEBEI NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BAND GAPS; BAND OFFSETS; CONDUCTION BAND OFFSET; HIGH-K GATE DIELECTRICS; OPTICAL DIELECTRIC CONSTANT; VALENCE BAND OFFSETS;

ALIGNMENT; CERAMIC CAPACITORS; DIELECTRIC MATERIALS; DIELECTRIC WAVEGUIDES; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HETEROJUNCTIONS; MOS CAPACITORS; PERMITTIVITY; SEMICONDUCTING SELENIUM COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; SPONTANEOUS EMISSION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67649760670 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3062792 Document Type: Article

Times cited : (17)

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