메뉴 건너뛰기




Volumn 94, Issue 25, 2009, Pages

Structural and electrical properties of thin SrHfON films for high- k gate dielectric

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION TEMPERATURE; EFFECTIVE WORK FUNCTION; GATE STACKS; HIGH DIELECTRIC CONSTANTS; HIGH-K GATE DIELECTRICS; N2 AMBIENT; ORDERS OF MAGNITUDE; POLYCRYSTALLINE; REACTIVE CO-SPUTTERING; STRUCTURAL AND ELECTRICAL PROPERTIES;

EID: 67649616856     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3152779     Document Type: Article
Times cited : (17)

References (18)
  • 1
    • 0001394083 scopus 로고    scopus 로고
    • 0036-8075,. 10.1126/science.285.5436.2079
    • P. A. Packan, Science 0036-8075 285, 2079 (1999). 10.1126/science.285. 5436.2079
    • (1999) Science , vol.285 , pp. 2079
    • Packan, P.A.1
  • 4
    • 0035881403 scopus 로고    scopus 로고
    • 0021-8979,. 10.1063/1.1382851
    • D. A. Neumayer and E. Cartier, J. Appl. Phys. 0021-8979 90, 1801 (2001). 10.1063/1.1382851
    • (2001) J. Appl. Phys. , vol.90 , pp. 1801
    • Neumayer, D.A.1    Cartier, E.2
  • 10
    • 33947368671 scopus 로고    scopus 로고
    • 0022-3093,. 10.1016/j.jnoncrysol.2006.12.030
    • J. Kim and K. Yong, J. Non-Cryst. Solids 0022-3093 353, 1172 (2007). 10.1016/j.jnoncrysol.2006.12.030
    • (2007) J. Non-Cryst. Solids , vol.353 , pp. 1172
    • Kim, J.1    Yong, K.2
  • 16
    • 0348252355 scopus 로고    scopus 로고
    • 0022-3727,. 10.1088/0022-3727/36/23/028
    • J. Zhu, Z. Liu, and Y. Feng, J. Phys. D: Appl. Phys. 0022-3727 36, 3051 (2003). 10.1088/0022-3727/36/23/028
    • (2003) J. Phys. D: Appl. Phys. , vol.36 , pp. 3051
    • Zhu, J.1    Liu, Z.2    Feng, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.