Preparation and characterization of Gd2O3-doped HfO2 high-k gate dielectric thin films by RF sputtering

Journal of Physics: Conference Series

Volumn 152, Issue , 2009, Pages

  Ji, Mei ^a   Wang, Lei ^a   Du, Jun ^a  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65749120234     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/152/1/012005     Document Type: Article

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