Characterization and Comparison of the Charge Trapping in HfSiON and HfO 2 Gate Dielectrics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 939-942

  Shanware, A ^a   Visokay, M R ^a   Chambers, J J ^a   Rotondaro, A L P ^a   McPherson, J ^a   Colombo, L ^a   Brown, G A ^b   Lee, C H ^b   Kim, Y ^b   Gardner, M ^b   Murto, R W ^b  

^a TEXAS INSTRUMENTS   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; CONSTANT VOLTAGE STRESS (CVS);

AMORPHOUS MATERIALS; DIELECTRIC MATERIALS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRON TRAPS; GATES (TRANSISTOR); HYSTERESIS; POLYSILICON; SILICA; STRESSES; THERMODYNAMIC STABILITY; TRANSISTORS;

HAFNIUM COMPOUNDS;

EID: 17644439238     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. Vol. 80, pp. 3183-3185, 2002.
2. S. J. Lee, H. F. Luan, W. P. Bai, C. H. Lee, T. S. Jeon, Y. Senzaki, D. Roberts, D. L. Kwong, pp. 31-34, IEDM 2000 technical digest.
3. A. Kerber, E. Cartier, L. Pantisano, M. Rosmeulen, R. Degraeve, T. Kauerauf, G. Groeseneken, H. E. Maes, U. Schwalke, p. 41, IRPS 2003 proceedings.
4. A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Khamankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Bevan, T. Grider, J. McPherson, L. Colombo, 2002 VLSI symp., pp. 148-149.
5. A. Shanware, M. R. Visokay, J. J. Chambers, A.L.P. Rotondaro, H. Bu, M. J. Bevan, R. Khamankar, S. Aur, P. E. Nicollian, J. McPherson, L. Colombo, p. 208, IRPS 2003 proceedings.
6. Y. Kim et al. VLSI symp. 2003, pp. 167-168.
7. P. M. Zeitoff et al. EDL, Vol. 24, pp.275-277, 2003.