High-k dielectrics by UV photo-assisted chemical vapour deposition

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 621-630

  Fang, Q ^a,b   Zhang, J Y ^c   Wang, Z M ^c   He, G ^b   Yu, J ^a   Boyd, Ian W ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b INSTITUTE OF SOLID STATE PHYSICS   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

CMOS devices; High k gate dielectrics; Metal oxide films; Photo CVD

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; EXCIMER LASERS; METALLIC FILMS; OXIDES; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL OXIDE FILMS;

DIELECTRIC MATERIALS;

EID: 0345352831     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00974-7     Document Type: Conference Paper

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