Composition dependence of electronic structure and optical properties of Hf1-x Six Oy gate dielectrics

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  He, G ^a   Zhang, L D ^a   Meng, G W ^a   Li, G H ^a   Fei, G T ^a   Wang, X J ^a   Zhang, J P ^a   Liu, M ^a   Fang, Q ^b,c   Boyd, Ian W ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ENERGY GAP; GALLIUM ALLOYS; GATES (TRANSISTOR); HAFNIUM; HETEROJUNCTIONS; MOS CAPACITORS; OPTICAL MATERIALS; OPTICAL PROPERTIES; OXYGEN; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPONTANEOUS EMISSION; STRUCTURE (COMPOSITION);

ALTERNATIVE GATE DIELECTRICS; ATOMIC COMPOSITIONS; BAND ALIGNMENTS; BAND GAPS; BAND OFFSETS; COMPLEX DIELECTRIC FUNCTIONS; COMPOSITION DEPENDENCES; CONDUCTION BAND OFFSETS; DEPOSITED FILMS; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; GATE STACKS; IN BANDS; LORENTZ MODELS; OPTICAL DIELECTRIC CONSTANTS; PHOTOEMISSION SPECTROSCOPIES; SILICON CONCENTRATIONS; SILICON CONTENTS; TUNNELING BARRIERS;

GATE DIELECTRICS;

EID: 57049124224     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3029664     Document Type: Article

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