Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study

Applied Physics Letters

Volumn 94, Issue 2, 2009, Pages

  Umezawa, Naoto ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; BARIUM; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; OXYGEN; OXYGEN VACANCIES; SOLID STATE PHYSICS; TRANSISTORS;

CHARGED DEFECTS; COMPLEX DEFECTS; COMPREHENSIVE STUDIES; ELECTRICAL PROPERTIES; FIRST-PRINCIPLES CALCULATIONS; INSULATING OXIDES; NEUTRAL STATES; POSITIVE CHARGES; STRONG COUPLINGS;

FIELD EFFECT TRANSISTORS;

EID: 58349117102     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3070534     Document Type: Article

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