SCOPUS 정보 검색 플랫폼

Journal of Materials Science and Technology

Volumn 23, Issue 4, 2007, Pages 433-448

Current progress of Hf (Zr)-based high-k gate dielectric thin films

a INSTITUTE OF SOLID STATE PHYSICS (China)

Author keywords

Hf (Zr) based high k gate dielectric; Optical properties; PVD

Indexed keywords

CHARACTERIZATION; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MICROSTRUCTURE; MOSFET DEVICES; OPTICAL PROPERTIES; PHYSICAL VAPOR DEPOSITION; SYNTHESIS (CHEMICAL); THIN FILMS; ZIRCONIUM COMPOUNDS;

CURRENT PROGRESS; FORMATION MECHANISMS; HAFNIUM BASED HIGH K GATE DIELECTRIC; HAFNIUM OXYNITRIDE; ZIRCONIUM BASED HIGH K GATE DIELECTRIC; ZIRCONIUM OXYNITRIDE;

GATE DIELECTRICS;

EID: 34547991110 PISSN: 10050302 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (21)

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