Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAIOx(N) achieved by adjusting Hf/Al compositional ratio

Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

  Kadoshima, Masaru ^a   Ogawa, Arito ^a   Ota, Hiroyuki ^b   Iwamoto, Kunihiko ^a   Takahashi, Masashi ^a   Mise, Nobuyuki ^a   Migita, Shinji ^b   Ikeda, Minoru ^a   Satake, Hideki ^a   Nabatame, Toshihide ^a   Toriumi, Akira ^b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DIELECTRIC MATERIALS; FERMI LEVEL; HAFNIUM COMPOUNDS; THIN FILMS; THRESHOLD VOLTAGE;

GATE ELECTRODES; HIGH-K DIELECTRICS; INTERFACIAL DIPOLES;

MOSFET DEVICES;

EID: 33645217470     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2178654     Document Type: Article

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