High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

IEEE Electron Device Letters

Volumn 28, Issue 4, 2007, Pages 292-294

  Wu, C H ^a   Hung, B F ^b   Chin, Albert ^b   Wang, S J ^a   Wang, X P ^c   Li, M F ^c   Zhu, C ^c   Yen, F Y ^d   Hou, Y T ^d   Jin, Y ^d   Tao, H J ^d   Chen, S C ^d   Liang, M S ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

HfLaON; Ir3Si; MOSFET; Work function

Indexed keywords

EFFECTIVE WORK FUNCTION; EQUIVALENT OXIDE THICKNESS; FABRICATION LINES; FLAT-BAND VOLTAGE; FULLY COMPATIBLE; HFLAON; HIGH MOBILITY; HIGH TEMPERATURE; ION IMPLANT; IR3SI; LOW-LEAKAGE CURRENT; MOS-FET; P-MOSFETS; PMOSFET; SELF-ALIGNED; VERY LARGE-SCALE INTEGRATION;

IRIDIUM; MOSFET DEVICES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; WORK FUNCTION;

SEMICONDUCTING SILICON COMPOUNDS; WORK FUNCTION;

EID: 58149252562     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.892367     Document Type: Article

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