Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3772-3778

  Buiu, O ^a   Lu, Y ^a   Hall, S ^a   Mitrovic, I Z ^a   Potter, R J ^a   Chalker, P R ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Band gap; Dielectric constant; Hafnium aluminate; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; ENERGY GAP; HAFNIUM ALLOYS; HAFNIUM COMPOUNDS; HYSTERESIS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY;

HAFNIUM ALUMINATE; INTERFACIAL LAYERS; SINGLE ANGLE ELLIPSOMETRY; SPECTROSCOPIC ELLIPSOMETRY;

METALLIC FILMS;

EID: 33846906023     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.09.035     Document Type: Article

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