The electronic structure change with Gd doping of Hf O2 on silicon

Applied Physics Letters

Volumn 91, Issue 13, 2007, Pages

  Losovyj, Ya B ^a   Ketsman, Ihor ^b   Sokolov, A ^b   Belashchenko, K D ^b   Dowben, P A ^b   Tang, Jinke ^c   Wang, Zhenjun ^c  

^a LOUISIANA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c UNIVERSITY OF WYOMING   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CRYSTALLOGRAPHY; ELECTRONIC STRUCTURE; FLUORSPAR; OXIDE FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CRYSTALLOGRAPHIC CHANGE; GD DOPING; SILICON SUBSTRATES; VALENCE BANDWIDTH;

GADOLINIUM;

EID: 34848922371     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2787967     Document Type: Article

References (26)

1. M. McCoy, Chem. Eng. News 83, 26 (2005).
2. B. H. Lee, L. Kang, W.-J. Qi, R. Nieh, K. Onishi, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 1999, 133 (1999).
3. M. Gutowski, J. E. Jaffe, C.-L. Liu, M. Stoker, R. I. Hegde, R. S. Raj, and P. J. Tobin, Appl. Phys. Lett. 80, 1897 (2002).
4. K. P. Bastos, J. Morais, L. Miotti, R. P. Pezzi, G. V. Soares, I. J. R. Baumvol, R. I. Hegde, H. H. Tseng, and P. J. Tobin, Appl. Phys. Lett. 81, 1669 (2002).
5. Z. K. Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang, M. Hong, C. H. Hsu, and J. Kwo, Appl. Phys. Lett. 90, 152908 (2007).
6. M. Komatsu, R. Yasuhara, H. Takahashi, S. Toyoda, H. Kumigashira, M. Oshima, D. Kukuruznyak, and T. Chikyow, Appl. Phys. Lett. 89, 172107 (2006).
7. J. Wang, H. P. Li, and R. Stevens, J. Mater. Sci. 27, 5397 (1992).
8. V. V. Kharton, A. A. Yaremchenko, E. N. Naumovich, and F. M. B. Marques, J. Solid State Electrochem. 4, 243 (2000).
9. P. Duran, C. Pasual, J. P. Coutures, and S. R. Skaggs, J. Am. Ceram. Soc. 66, 101 (1983).
10. S. L. Dole, O. Hunter, Jr., and F. W. Calderwood, J. Am. Ceram. Soc. 63, 136 (1980).
11. S. V. Ushakov, A. Navrotsky, and K. B. Helean, J. Am. Ceram. Soc. 90, 1171 (2007).
12. S. Dhar, O. Brandt, M. Ramsteiner, V. F. Sapega, and K. H. Ploog, Phys. Rev. Lett. 94, 037205 (2005).
13. S. Dhar, T. Kammermeir, A. Ney, L. Ṕrez, K. H. Ploog, A. Melnikov, and A. D. Wieck, Appl. Phys. Lett. 89, 062503 (2006).
14. K. Potzger, S.-Q. Zhou, F. Eichhorn, M. Helm, W. Skorupa, A. Mücklich, J. Fassbender, T. Herrmannsdorfer, and A. Bianchi, J. Appl. Phys. 99, 063906 (2006).
15. M. Venkatesan, C. B. Fitzgerald, and J. D. M. Coey, Nature (London) 430, 630 (2004).
16. W. Wang, Y. Hong, M. Yu, B. Rout, G. A. Glass, and J. Tang, J. Appl. Phys. 99, 08M117 (2006).
17. I. Ketsman, Ya. B. Losovyj, A. Sokolov, J. Tang, Z. Wang, K. D. Belashchenko, and P. A. Dowben, Appl. Phys. A: Mater. Sci. Process. 89, 489 (2007).
18. Ya. B. Losovyj, I. Ketsman, E. Morikawa, Z. Wang, J. Tang, and P. A. Dowben, " Optimization of the 3 m TGM beamline, at CAMD, for constant initial state spectroscopy., " Nucl. Instrum. Methods Phys. Res. A (in press).
19. P. A. Dowben, D. LaGraffe, and M. Onellion, J. Phys.: Condens. Matter 1, 6571 (1989).
20. O. Renault, D. Samour, J.-F. Damlencourt, D. Blin, F. Martin, S. Mathon, N. T. Barrett, and P. Besson, Appl. Phys. Lett. 81, 3627 (2002).
21. S. Suzer, S. Sayan, M. M. Banaszak Holl, E. Garfunkel, Z. Hussain, and N. M. Hamdan, J. Vac. Sci. Technol. A 21, 106 (2003).
22. S. Sayan, T. Emge, E. Garfunkel, X. Zhao, L. Wielunski, R. A. Bartynski, D. Vanderbilt, J. S. Suehle, S. Suzer, and M. M. Banaszak Holl, J. Appl. Phys. 96, 7485 (2004).
23. S. Sayan, R. A. Bartynski, X. Zhao, E. P. Gusev, D. Vanderbilt, M. Croft, M. M. Banaszak Holl, and S. Suzer, Phys. Status Solidi B 241, 2246 (2004).
24. A. Eichler and G. Kresse, Phys. Rev. B 69, 045402 (2004).
25. N. V. Skorodumova, M. Baudin, and K. Hermansson, Phys. Rev. B 69, 075401 (2004).
26. C. SchüΒler-Langeheine, R. Meier, H. Ott, Z. Hu, Chandan Mazumdar, A. Yu. Grigoriev, G. Kaindl, and E. Weschke, Phys. Rev. B 60, 3449 (1999).