Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering

Applied Physics Letters

Volumn 84, Issue 9, 2004, Pages 1588-1590

  Kang, J F ^a,b   Yu, H Y ^a   Ren, C ^a   Li, M F ^a   Chan, D S H ^a   Hu, H ^a   Lim, H F ^a   Wang, W D ^c   Gui, D ^d   Kwong, D L ^e  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b PEKING UNIVERSITY   (China)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

^e The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL STABILITY; POSTDEPOSITION ANNEALING (PDA);

ANNEALING; CHEMICAL BONDS; HYDROGEN INORGANIC COMPOUNDS; INTERFACES (MATERIALS); NITROGEN; OXYGEN; PHYSICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SECONDARY ION MASS SPECTROMETRY; SILICON; SPUTTERING; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC MATERIALS;

EID: 12144291229     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1651652     Document Type: Article

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