Structural and electrical properties of HfOxNy and HfO2 gate dielectrics in TaN gated nMOSCAP and nMOSFET devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1755-1758

  Choi, Kyu Jeong ^a   Kim, Jeon Ho ^a   Yoon, Soon Gil ^a   Shin, Woong Chul ^b  

^a Chungnam National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTALLIZATION; DIELECTRIC MATERIALS; DIFFUSION; DOPING (ADDITIVES); FILM GROWTH; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; THIN FILMS;

GATE DIELECTRICS; PARAMETER ANALYZERS; POSTDEPOSITION ANNEALING; PRECURSORS;

MOSFET DEVICES;

EID: 4944229743     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1771664     Document Type: Article

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