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Volumn 1, Issue 5, 2006, Pages 425-430

A simple approach to reduce interlayer formation of sputtered HF-based gate dielectrics by nitrogen incorporation

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 33845268615     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209292     Document Type: Conference Paper
Times cited : (3)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.