Characterization of HfO x N y gate dielectrics using a hafnium oxide as target

Applied Surface Science

Volumn 252, Issue 24, 2006, Pages 8673-8676

  Liu, M ^a   Fang, Q ^a,b   He, G ^a   Zhu, L Q ^a   Zhang, L D ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Crystallization; High k; Interface; Optical properties

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; CRYSTALLIZATION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); OPTICAL PROPERTIES; THERMODYNAMIC STABILITY;

HAFNIUM OXIDE; HIGH-K; POST DEPOSITION ANNEALING;

HAFNIUM COMPOUNDS;

EID: 33748970025     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.12.003     Document Type: Article

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