Optimization of sub 3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient

Applied Physics Letters

Volumn 70, Issue 3, 1997, Pages 384-386

  Kumar, Kiran ^a,c   Chou, Anthony I ^a   Lin, Chuan ^a   Choudhury, Prasenjit ^a   Lee, Jack C ^a   Lowell, John K ^b  

^a The University of Texas at Austin   (United States)

^b APPLIED MATERIALS INC   (United States)

^c AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000052518     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118389     Document Type: Article

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