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Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

Effect of Ti incorporation on the interfacial and optical properties of HfTiO thin films

(5) Liu, M a Zhang, L D a He, G a Wang, X J a Fang, M a

a INSTITUTE OF SOLID STATE PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CONDUCTION BAND OFFSET; EXTINCTION COEFFICIENTS; INTERFACIAL LAYER; INTERFACIAL STRUCTURES; RADIO FREQUENCY REACTIVE MAGNETRON SPUTTERING; TI CONTENT; TI DOPED; TI-INCORPORATION; VALENCE BAND OFFSETS; XPS SPECTRA;

ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HETEROJUNCTIONS; OPTICAL CONSTANTS; REFRACTIVE INDEX; SILICATES; THIN FILMS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL FILMS;

EID: 77955787961 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3462467 Document Type: Article

Times cited : (51)

References (28)

1
- 0035872897
- JAPIAU 0021-8979,. 10.1063/1.1361065
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 89, 5243 (2001). 10.1063/1.1361065
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

2
- 79956030489
- APPLAB 0003-6951,. 10.1063/1.1510155
- C. S. Kang, H. -J. Cho, K. Onishi, R. Nieh, R. Choi, S. Gopalan, S. Krishnan, J. H. Han, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 81, 2593 (2002). 10.1063/1.1510155
- (2002) Appl. Phys. Lett. , vol.81 , pp. 2593
- Kang, C.S.¹ Cho, H.-J.² Onishi, K.³ Nieh, R.⁴ Choi, R.⁵ Gopalan, S.⁶ Krishnan, S.⁷ Han, J.H.⁸ Lee, J.C.⁹

3
- 12144291229
- APPLAB 0003-6951,. 10.1063/1.1651652
- J. F. Kang, H. Y. Yu, C. Ren, M. -F. Li, D. S. H. Chan, H. Hu, H. F. Lim, W. D. Wang, D. Gui, and D. -L. Kwong, Appl. Phys. Lett. APPLAB 0003-6951 84, 1588 (2004). 10.1063/1.1651652
- (2004) Appl. Phys. Lett. , vol.84 , pp. 1588
- Kang, J.F.¹ Yu, H.Y.² Ren, C.³ Li, M.-F.⁴ Chan, D.S.H.⁵ Hu, H.⁶ Lim, H.F.⁷ Wang, W.D.⁸ Gui, D.⁹ Kwong, D.-L.¹⁰

4
- 33748138117
- ASUSEE 0169-4332,. 10.1016/j.apsusc.2005.10.024
- X. Cheng, Z. Song, J. Jiang, Y. Yu, W. Yang, and D. Shen, Appl. Surf. Sci. ASUSEE 0169-4332 252, 8073 (2006). 10.1016/j.apsusc.2005.10.024
- (2006) Appl. Surf. Sci. , vol.252 , pp. 8073
- Cheng, X.¹ Song, Z.² Jiang, J.³ Yu, Y.⁴ Yang, W.⁵ Shen, D.⁶

5
- 0038712510
- EDLEDZ 0741-3106,. 10.1109/LED.2003.810881
- C. H. Choi, T. S. Jeon, R. Clark, and D. L. Kwong, IEEE Electron Device Lett. EDLEDZ 0741-3106 24, 215 (2003). 10.1109/LED.2003.810881
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 215
- Choi, C.H.¹ Jeon, T.S.² Clark, R.³ Kwong, D.L.⁴

6
- 0346534582
- JAPIAU 0021-8979,. 10.1063/1.371888
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 87, 484 (2000). 10.1063/1.371888
- (2000) J. Appl. Phys. , vol.87 , pp. 484
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

7
- 45149088207
- JAPIAU 0021-8979,. 10.1063/1.2936895
- V. Mikhelashvili, G. Eisenstein, P. Thangadurai, W. D. Kaplan, R. Brener, and C. Saguy, J. Appl. Phys. JAPIAU 0021-8979 103, 114106 (2008). 10.1063/1.2936895
- (2008) J. Appl. Phys. , vol.103 , pp. 114106
- Mikhelashvili, V.¹ Eisenstein, G.² Thangadurai, P.³ Kaplan, W.D.⁴ Brener, R.⁵ Saguy, C.⁶

8
- 19944391305
- JESOAN 0013-4651,. 10.1149/1.1803571
- Z. M. Rittersma, F. Roozeboom, M. A. Verheijen, J. G. M. van Berkum, T. Dao, J. H. M. Snijders, E. Vainonen-Ahlgren, E. Tois, M. Tuominen, and S. Haukka, J. Electrochem. Soc. JESOAN 0013-4651 151, C716 (2004). 10.1149/1.1803571
- (2004) J. Electrochem. Soc. , vol.151 , pp. 716
- Rittersma, Z.M.¹ Roozeboom, F.² Verheijen, M.A.³ Van Berkum, J.G.M.⁴ Dao, T.⁵ Snijders, J.H.M.⁶ Vainonen-Ahlgren, E.⁷ Tois, E.⁸ Tuominen, M.⁹ Haukka, S.¹⁰

9
- 0000551766
- APPLAB 0003-6951,. 10.1063/1.124036
- G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 74, 2854 (1999). 10.1063/1.124036
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2854
- Wilk, G.D.¹ Wallace, R.M.²

10
- 79956056584
- APPLAB 0003-6951,. 10.1063/1.1476397
- M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. APPLAB 0003-6951 80, 3183 (2002). 10.1063/1.1476397
- (2002) Appl. Phys. Lett. , vol.80 , pp. 3183
- Visokay, M.R.¹ Chambers, J.J.² Rotondaro, A.L.P.³ Shanware, A.⁴ Colombo, L.⁵

11
- 34548630910
- JAPIAU 0021-8979,. 10.1063/1.2776254
- L. M. Lin and P. T. Lai, J. Appl. Phys. JAPIAU 0021-8979 102, 054515 (2007). 10.1063/1.2776254
- (2007) J. Appl. Phys. , vol.102 , pp. 054515
- Lin, L.M.¹ Lai, P.T.²

12
- 58149508161
- APPLAB 0003-6951,. 10.1063/1.3063126
- G. Dutta, Appl. Phys. Lett. APPLAB 0003-6951 94, 012907 (2009). 10.1063/1.3063126
- (2009) Appl. Phys. Lett. , vol.94 , pp. 012907
- Dutta, G.¹

13
- 34547689087
- APPLAB 0003-6951,. 10.1063/1.2767177
- F. Ji, J. P. Xu, P. T. Lai, C. X. Li, and J. G. Guan, Appl. Phys. Lett. APPLAB 0003-6951 91, 052902 (2007). 10.1063/1.2767177
- (2007) Appl. Phys. Lett. , vol.91 , pp. 052902
- Ji, F.¹ Xu, J.P.² Lai, P.T.³ Li, C.X.⁴ Guan, J.G.⁵

14
- 25144512382
- JAPIAU 0021-8979,. 10.1063/1.2039268
- M. Li, Z. Zhang, S. A. Campbell, W. L. Gladfelter, M. P. Agustin, D. O. Klenov, and S. Stemmer, J. Appl. Phys. JAPIAU 0021-8979 98, 054506 (2005). 10.1063/1.2039268
- (2005) J. Appl. Phys. , vol.98 , pp. 054506
- Li, M.¹ Zhang, Z.² Campbell, S.A.³ Gladfelter, W.L.⁴ Agustin, M.P.⁵ Klenov, D.O.⁶ Stemmer, S.⁷

15
- 33847115246
- JAPIAU 0021-8979,. 10.1063/1.2432379
- M. Liu, Q. Fang, G. He, L. Q. Zhu, and L. D. Zhang, J. Appl. Phys. JAPIAU 0021-8979 101, 034107 (2007). 10.1063/1.2432379
- (2007) J. Appl. Phys. , vol.101 , pp. 034107
- Liu, M.¹ Fang, Q.² He, G.³ Zhu, L.Q.⁴ Zhang, L.D.⁵

16
- 0142089016
- APPLAB 0003-6951,. 10.1063/1.1608488
- M. Lee, Z. H. Lu, W. T. Ng, D. Landheer, X. Wu, and S. Moisa, Appl. Phys. Lett. APPLAB 0003-6951 83, 2638 (2003). 10.1063/1.1608488
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2638
- Lee, M.¹ Lu, Z.H.² Ng, W.T.³ Landheer, D.⁴ Wu, X.⁵ Moisa, S.⁶

17
- 17044438306
- APPLAB 0003-6951,. 10.1063/1.1866644
- K. Seo, P. C. McIntyre, H. Kim, and K. C. Saraswat, Appl. Phys. Lett. APPLAB 0003-6951 86, 082904 (2005). 10.1063/1.1866644
- (2005) Appl. Phys. Lett. , vol.86 , pp. 082904
- Seo, K.¹ McIntyre, P.C.² Kim, H.³ Saraswat, K.C.⁴

18
- 0036537255
- JAPIAU 0021-8979,. 10.1063/1.1455155
- P. D. Kirsch, C. S. Kang, J. Lozano, J. C. Lee, and J. G. Ekerdt, J. Appl. Phys. JAPIAU 0021-8979 91, 4353 (2002). 10.1063/1.1455155
- (2002) J. Appl. Phys. , vol.91 , pp. 4353
- Kirsch, P.D.¹ Kang, C.S.² Lozano, J.³ Lee, J.C.⁴ Ekerdt, J.G.⁵

19
- 35548936042
- APPLAB 0003-6951,. 10.1063/1.2795331
- L. Q. Zhu, L. D. Zhang, and Q. Fang, Appl. Phys. Lett. APPLAB 0003-6951 91, 172902 (2007). 10.1063/1.2795331
- (2007) Appl. Phys. Lett. , vol.91 , pp. 172902
- Zhu, L.Q.¹ Zhang, L.D.² Fang, Q.³

20
- 33646688638
- APPLAB 0003-6951,. 10.1063/1.2202689
- M. Liu, Q. Fang, G. He, L. Li, L. Q. Zhu, G. H. Li, and L. D. Zhang, Appl. Phys. Lett. APPLAB 0003-6951 88, 192904 (2006). 10.1063/1.2202689
- (2006) Appl. Phys. Lett. , vol.88 , pp. 192904
- Liu, M.¹ Fang, Q.² He, G.³ Li, L.⁴ Zhu, L.Q.⁵ Li, G.H.⁶ Zhang, L.D.⁷

21
- 0038170605
- SSTEET 0268-1242,. 10.1088/0268-1242/18/6/322
- N. R. Aghamalyan, I. A. Gambaryan, E. K. Goulanian, R. K. Hovsepyan, R. B. Kostanyan, S. I. Petroyan, E. S. Vardanyan, and A. F. Zerrouk, Semicond. Sci. Technol. SSTEET 0268-1242 18, 525 (2003). 10.1088/0268-1242/18/6/322
- (2003) Semicond. Sci. Technol. , vol.18 , pp. 525
- Aghamalyan, N.R.¹ Gambaryan, I.A.² Goulanian, E.K.³ Hovsepyan, R.K.⁴ Kostanyan, R.B.⁵ Petroyan, S.I.⁶ Vardanyan, E.S.⁷ Zerrouk, A.F.⁸

22
- 0038001548
- JPCBFK 1089-5647,. 10.1021/jp030133h
- H. Irie, Y. Watanabe, and K. Hashimoto, J. Phys. Chem. B JPCBFK 1089-5647 107, 5483 (2003). 10.1021/jp030133h
- (2003) J. Phys. Chem. B , vol.107 , pp. 5483
- Irie, H.¹ Watanabe, Y.² Hashimoto, K.³

23
- 31044438318
- JVTAD6 0734-2101,. 10.1116/1.2091096
- N. V. Nguyen, S. Sayan, I. Levin, J. R. Ehrstein, I. J. R. Baumvol, C. Driemeier, C. Krug, L. Wielunski, P. Y. Hung, and A. Diebold, J. Vac. Sci. Technol. A JVTAD6 0734-2101 23, 1706 (2005). 10.1116/1.2091096
- (2005) J. Vac. Sci. Technol. A , vol.23 , pp. 1706
- Nguyen, N.V.¹ Sayan, S.² Levin, I.³ Ehrstein, J.R.⁴ Baumvol, I.J.R.⁵ Driemeier, C.⁶ Krug, C.⁷ Wielunski, L.⁸ Hung, P.Y.⁹ Diebold, A.¹⁰

24
- 41349122216
- APPLAB 0003-6951,. 10.1063/1.2903097
- X. J. Wang, L. D. Zhang, M. Liu, J. P. Zhang, and G. He, Appl. Phys. Lett. APPLAB 0003-6951 92, 122901 (2008). 10.1063/1.2903097
- (2008) Appl. Phys. Lett. , vol.92 , pp. 122901
- Wang, X.J.¹ Zhang, L.D.² Liu, M.³ Zhang, J.P.⁴ He, G.⁵

25
- 33646704489
- APPLAB 0003-6951,. 10.1063/1.2202752
- J. Wang, J. W. Chai, Y. F. Dong, Y. P. Feng, N. Sutanto, J. S. Pan, and A. C. H. Huan, Appl. Phys. Lett. APPLAB 0003-6951 88, 192103 (2006). 10.1063/1.2202752
- (2006) Appl. Phys. Lett. , vol.88 , pp. 192103
- Wang, J.¹ Chai, J.W.² Dong, Y.F.³ Feng, Y.P.⁴ Sutanto, N.⁵ Pan, J.S.⁶ Huan, A.C.H.⁷

26
- 33646198048
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.44.1620
- E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. PRLTAO 0031-9007 44, 1620 (1980). 10.1103/PhysRevLett.44.1620
- (1980) Phys. Rev. Lett. , vol.44 , pp. 1620
- Kraut, E.A.¹ Grant, R.W.² Waldrop, J.R.³ Kowalczyk, S.P.⁴

27
- 0037042072
- ASUSEE 0169-4332,. 10.1016/S0169-4332(01)00841-8
- S. Miyazaki, Appl. Surf. Sci. ASUSEE 0169-4332 190, 66 (2002). 10.1016/S0169-4332(01)00841-8
- (2002) Appl. Surf. Sci. , vol.190 , pp. 66
- Miyazaki, S.¹

28
- 3142565249
- JAPIAU 0021-8979,. 10.1063/1.1703821
- V. V. Afanas'ev, A. Stesmans, F. Chen, M. Li, and S. A. Campbell, J. Appl. Phys. JAPIAU 0021-8979 95, 7936 (2004). 10.1063/1.1703821
- (2004) J. Appl. Phys. , vol.95 , pp. 7936
- Afanas'Ev, V.V.¹ Stesmans, A.² Chen, F.³ Li, M.⁴ Campbell, S.A.⁵

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