SrHfO3 as gate dielectric for future CMOS technology

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1869-1873

  Rossel, C ^a   Sousa, M ^a   Marchiori, C ^a   Fompeyrine, J ^a   Webb, D ^a   Caimi, D ^a   Mereu, B ^a   Ispas, A ^a   Locquet, J P ^a   Siegwart, H ^a   Germann, R ^a   Tapponnier, A ^a   Babich, K ^b  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Band gap and band offset; Channel mobility; High gate dielectrics; MOSFETs; Perovskites

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL LAYERS; MOLECULAR BEAM EPITAXY; STRONTIUM COMPOUNDS; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND OFFSET; CHANNEL MOBILITY; CURRENT MAPPING; OXIDE THICKNESS;

GATE DIELECTRICS;

EID: 34248645710     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.029     Document Type: Article

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