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Volumn 93, Issue 18, 2008, Pages

Permittivity enhancement of hafnium dioxide high- κ films by cerium doping

(10) Chalker, P R a Werner, M a Romani, S a Potter, R J a Black, K a Aspinall, H C a Jones, A C a Zhao, C Z a Taylor, S a Heys, P N b

a UNIVERSITY OF LIVERPOOL (United Kingdom)

b SAFC Hitech (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; CERIUM; DIELECTRIC PROPERTIES; HAFNIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; OXIDE FILMS; PERMITTIVITY; PULSED LASER DEPOSITION; THICK FILMS;

AMORPHOUS STATES; ATOMIC LAYERS; CERIUM DOPING; DEPOSITED FILMS; FLAT BANDS; HAFNIUM DIOXIDES; HAFNIUM OXIDES; LIQUID INJECTIONS; RELATIVE PERMITTIVITIES; VOLTAGE SHIFTS;

AMORPHOUS FILMS;

EID: 55849118474 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3023059 Document Type: Article

Times cited : (69)

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