Silicate layer formation at HfO2/SiO2/Si interface determined by x-ray photoelectron spectroscopy and infrared spectroscopy

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  He, G ^a   Zhang, L D ^a   Fang, Q ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); SILICATES; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE REACTIONS; INTERFACIAL LAYERS; SILICATE LAYER FORMATION; VACUUM ANNEALING;

HAFNIUM COMPOUNDS;

EID: 33750534383     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2361161     Document Type: Article

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