Band structure and electrical properties of Gd-doped HfO2 high k gate dielectric

Applied Physics Letters

Volumn 97, Issue 1, 2010, Pages

  Xiong, Yuhua ^a   Tu, Hailing ^a   Du, Jun ^a   Ji, Mei ^a   Zhang, Xinqiang ^a   Wang, Lei ^a  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND OFFSETS; CONDUCTION BAND OFFSET; CONDUCTION-BAND MINIMUM; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; GATE VOLTAGES; HIGH-K GATE DIELECTRICS; ORDERS OF MAGNITUDE; PHYSICAL THICKNESS;

CONDUCTION BANDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON MOBILITY; ENERGY GAP; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HETEROJUNCTIONS; OXYGEN; OXYGEN VACANCIES;

GADOLINIUM;

EID: 77954745331     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3460277     Document Type: Article

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