Carrier transport in HfO2/metal gate MOSFETs: Physical insight into critical parameters

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 759-768

  Cassé, Mikaël ^a   Thevenod, Laurent ^a   Guillaumot, Bernard ^b   Tosti, Lucie ^a   Martin, François ^a   Mitard, Jérôme ^b   Weber, Olivier ^c   Andrieu, François ^a   Ernst, Thomas ^a   Reimbold, Gilles ^a   Billon, Thierry ^a   Mouis, Mireille ^d   Boulanger, Fabien ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^d CNRS   (France)

Author keywords

Dielectric materials; HFO2; Metal gate; MOSFETs

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HOLE MOBILITY; PHONONS; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS;

CARRIER TRANSPORT; METAL GATE MOSFET; REMOTE COULOMB SCATTERING (RCS);

MOSFET DEVICES;

EID: 33645751552     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870888     Document Type: Article

References (52)

1. M. Fischetti, "Scaling MOSFETs to the limit: A physicist's perspective," J. Comput. Electron., vol. 2, no. 2-4, pp. 73-79, 2003.
2. G. Bersuker, P. Zeitzoff, G. Brown, and H. Huff, "Dielectrics for future transistors," Mater. Today, vol. 7, no. 1, pp. 26-33, Jan. 2004.
3. R.M. Wallace and G. D.Wilk, "Materials issues for high-κ gate dielectric selection and integration," in High Dielectric Constant Materials - VLSI MOSFET Applications, H. R. Huff and D. C. Gilmer, Eds. Berlin, Germany: Springer-Verlag, 2005, ch. 9, pp. 253-286.
4. V. Misra, "Issues in metal gate electrode selection for bulk CMOS devices," in High Dielectric Constant Materials_VLSI MOSFET Applications, H. R. Huff and D. C. Gilmer, Eds. Berlin, Germany: Springer-Verlag, 2005, ch. 14, pp. 415-434.
5. G. Reimbold, J. Mitard, M. Cassé, X. Garros, C. Leroux, L. Thevenod, and F. Martin, "Electrical characterization of high k devices: Charges and traps effects on instability, reliability and mobility behaviour," in Proc. Int. ECS Symp.: Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Dielectrics VIII, Quebec City, QC, Canada, 2005, vol. 2005-01, pp. 437-455.
6. S. Saito, D. Hisamoto, S. Kimura, and M. Hiratani, "Unified mobility model for high-k gate stacks," in IEDM Tech. Dig., 2003, pp. 33.3.1-33.3.4.
7. M. Fischetti, D. A. Neumayer, and E. A. Cartier, "Effective electron mobility in Si inversion layers in metal oxide semiconductor systems with a high-k insulator: The role of remote phonon scattering," J. Appl. Phys., vol. 90, no. 9, pp. 4587-4608, Nov. 2001.
8. Z. Ren, M. V. Fischetti, E. P. Gusev, E. A. Cartier, and M. Chudzik, "Inversion channel mobility in high-κ high performance MOSFETs," in IEDM Tech. Dig., 2003, pp. 33.2.1-33.2.4.
9. W. Zhu and T. P. Ma, "Temperature dependence of channel mobility in HfO2-gated NMOSFETS," IEEE Electron Device Lett., vol. 25, no. 2, pp. 89-91, Feb. 2004.
10. 2 n-MOSFETs," in Proc. Extended Abstract SSDM, Tokyo, Japan, 2004, pp. 20-21.
11. 2/TiN gate stack," in IEDM Tech. Dig., 2003, pp. 28.1.1-28.1.4.
12. R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and M. Metz, "High-κ/metal gate stack and its MOSFET characteristics," IEEE Electron Device Lett., vol. 25, no. 6, pp. 408-410, Jun. 2004.
13. R. Kotlyar, M. Giles, P. Matagne, B. Obradovic, L. Shifren, M. Stettler, and E. Wang, "Inversion mobility and gate leakage in high-κ/metal gate MOSFETs," in IEDM Tech. Dig., 2004, pp. 391-394.
14. 2 on the device performance of high-κ based transistors," in IEDM Tech. Dig., 2003, pp. 4.2.1-4.2.4.
15. L.-A. Ragnarsson, N. A. Bojarczuk, J. Karasinski, and S. Guha, "Hall mobility in hafnium oxide based MOSFETs: Charge effects," IEEE Electron Device Lett., vol. 24, no. 11, pp. 689-691, Nov. 2003.
16. 2/TiN surface channel n- and p-MOSFETs," in IEDM Tech. Dig., 2004, pp. 867-870.
17. 2 metal oxide semiconductor field effect transistor," Appl. Phys. Lett., vol. 85, no. 7, pp. 1286-1288, Aug. 2004.
18. D. Esseni and A. Abramo, "Modeling of electron mobility degradation by remote coulomb scattering in ultrathin oxide MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 7, pp. 1665-1674, Jul. 2003.
19. M. Muller, S. Duguay, B. Guillaumot, X. Garros, C. Leroux, B. Tavel, F. Martin, M. Rivoire, D. Delille, F. Boeuf, S. Deleonibus, and T. Skotnicki, "Towards a better EOT-mobility trade-off in high-κ/metal gate CMOS devices," in Proc. ESSDERC, 2003, pp. 367-370.
20. B. Guillaumot, X. Garros, F. Lime, K. Oshima, B. Tavel, J. Chroboczek, P. Masson, R. Truche, A. Papon, F. Martin, J. Damlencourt, S. Maitrejean, M. Rivoire, C. Leroux, S. Cristoloveanu, G. Ghibaudo, J. Autran, T. Skotnicki, and S. Deleonibus, "75 nm damascene metal gate and high-κ integration for advanced CMOS devices," in IEDM Tech. Dig., 2002, pp. 355-358.
21. C. Sodini, T. Ekstedt, and J. Moll, "Charge accumulation and mobility in thin dielectric MOS transistors," Solid State Electron., vol. 25, no. 9, pp. 833-841, 1982.
22. A. Kerber, E. Cartier, L. Ragnarsson, M. Rosmeulen, L. Pantisano, R. Degraeve, Y. Kim, and G. Groeseneken, "Direct measurement of the inversion charge in MOSFETs: Application to mobility extraction in alternative gate dielectrics," in Symp. VLSI Tech. Dig., Kyoto, Japan, 2003, pp. 159-160.
23. C. Leroux, J. Mitard, G. Ghibaudo, X. Garros, G. Reimbold, B. Guillaumot, and F. Martin, "Characterization and modeling of hysteresis phenomena in high κ dielectrics," in IEDM Tech. Dig., 2004, pp. 737-740.
24. D. Singh, P. Solomon, E. P. Gusev, G. Singco, and Z. Ren, "Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-κ MOSFETs," in IEDM Tech. Dig., 2004, pp. 863-866.
25. T. Guillaume, M. Mouis, S. Maitrejean, A. Poncet, M. Vinet, and S. Deleonibus, "Evaluation of strain-induced mobility variation in TiN metal gate SOI n-MOSFETs," in Proc. ESSDERC, 2004, pp. 393-396.
26. Z. Krivokapic, V. Moroz,W. Maszara, andM. Lin, "Locally strained ultrathin channel 25 nm narrow FD-SOI devices with metal gate and mesa isolation," in IEDM Tech. Dig., 2003, pp. 18.5.1-18.5.4.
27. Z. Ma, Z. Liu, Y. Cheng, P. Ko, and C. Hu, "New insight into high-field mobility enhancement of nitrided-oxide N-MOSFETs based on noise measurement," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2205-2209, Nov. 1994.
28. M. Khare, X. Wang, and T. Ma, "Transconductance in nitride-gate or oxynitride-gate transistors," IEEE Electron Device Lett., vol. 20, no. 1, pp. 57-59, Jan. 1999.
29. 2 surface roughness in n and pMOSFETs," Proc. INFOS 2005, Microelectron. Eng., vol. 80, pp. 11-14, 2005.
30. S. Saito, K. Torii, Y. Shimamoto, S. Tsujikawa, H. Hamamura, O. Tonomura, T. Mine, D. Hisamoto, T. Onai, J. Yugami, M. Hiratan, and S. Kimura, "Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics," Appl. Phys. Lett., vol. 84, no. 8, pp. 1395-1397, Feb. 2004.
31. J. Watling, L. Yang, M. Borici, R. Wilkins, A. Asenov, J. Narker, and S. Roy, "The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs," Solid State Electron., vol. 48, no. 8, pp. 1337-1346, 2004.
32. T. Ando, A. B. Fowler, and F. Stern, "Electronic properties of two-dimensional systems," Rev. Mod. Phys., vol. 54, no. 2, pp. 437-672, Apr. 1982.
33. S. Villa, A. Lacaita, L. Perron, and R. Bez, "A physically-based model of the effective mobility in heavily-doped n-MOSFET's," IEEE Trans. Electron Devices, vol. 45, no. 1, pp. 110-115, Jan. 1998.
34. M. S. Krishnan, Y. C. Yeo, Q. Lu, T. J. King, J. Bokor, and C. Hu, "Remote charge scattering in MOSFETs with ultra-thin gate dielectrics," in IEDM Tech. Dig., 1998, pp. 571-574.
35. D. Jeon and D. Burk, "MOSFET electron inversion layer mobilities - A physically based semi-empirical model for a wide temperature range," IEEE Trans. Electron Devices, vol. 36, no. 8, pp. 1456-1463, Aug. 1989.
36. M. Lundstrom, Fundamentals of Carrier Transport, 2nd ed. Cambridge, U.K.: Cambridge Univ. Press, 2000.
37. 2 dielectrics," Microelectron. Eng., vol. 72, no. 1-4, pp. 121-124, Apr. 2004
38. S. Saito, K. Hiratani, and T. Onai, "Improved theory for remote-charge-scattering-limited mobility in metal-oxide-semiconductor transistors," Appl. Phys. Lett., vol. 81, no. 13, pp. 2391-2393, Sep. 2002.
39. F. Gamiz and M. V. Fischetti, "Remote coulomb scattering in metal-oxidesemiconductor field effect transistors: Screening by electrons in the gate," Appl. Phys. Lett., vol. 83, no. 23, pp. 4848-4850, Dec. 2003.
40. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, "Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides," IEEE Trans. Electron Devices, vol. 47, no. 2, pp. 440-447, Feb. 2000.
41. C. Fulton, G. Lucovsky, and R. Nemanich, "Process dependent band structure changes of transition-metal (Ti, Zr, Hf) oxides on Si(100)" Appl. Phys. Lett., vol. 84, no. 4, pp. 580-582, Jan. 2004.
42. S. De Gendt, "Advanced gate stacks: High-k dielectrics and metal gates," in Tutorials IEDM Tech. Dig., San Francisco, CA, 2004.
43. J. Robertson, "Interfaces and defects of high-k oxides on silicon," Solid State Electron., vol. 49, no. 3, pp. 283-293, Mar. 2005.
44. D. Jena, A. C. Gossard, and U. K. Mishra, "Dipole scattering in polarization induced III-V nitride two-dimensional electron gases," J. Appl. Phys., vol. 88, no. 8, pp. 4734-4738, Oct. 2000.
45. L. Ragnarsson, S. Guha, M. Copel, E. Cartier, N. A. Bojarczuk, and J. Karasinski, "Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal-oxide-semiconductor field-effect transistors: Effective electron mobility," Appl. Phys. Lett., vol. 78, no. 26, pp. 4169-4171, Jun. 2001.
46. 2 interface," J. Appl. Phys., vol. 63, no. 6, pp. 2000-2005, Mar. 1988.
47. 2: Polycrystalline silicon gate electrode interfaces," Appl. Phys. Lett., vol. 86, no. 1, pp. 012904-1-012904-3, Jan. 2005.
48. 2 gate stacks," in IEDM Tech. Dig., 2004, pp. 825-828.
49. G. Bersuker, J. Barnett, N. Moumen, B. Foran, C. D. Young, P. Lysaght, J. Peterson, B. H. Lee, P. M. Zeitzoff, and H. R. Huff, "Interface layerinduced mobility degradation in high-k transistors," Jpn. J. Appl. Phys., vol. 43, no. 11B, pp. 7899-7902, Nov. 2004.
50. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, "On the universality of inversion layer mobility in Si MOSFET's: Part I_Effects of substrate impurity concentration," IEEE Trans. Electron Devices, vol. 41, no. 12, pp. 2357-2362, Dec. 1994.
51. O. Weber, M. Cassé, L. Thevenod, F. Ducroquet, T. Ernst, B. Guillaumot, and S. Deleonibus, "Accurate investigation of the high-κ soft phonon scattering mechanism in metal gate MOSFETs," in Proc. ESSDERC, 2005, pp. 379-382.
52. A. Bhatt, K. W. Kim, M. Stroscio, G. J. Iafrate, M. Dutta, H. L. Grubin, R. Haque, and X. T. Zhu, "Reduction of interface phonon modes using metal-semiconductor heterostructures," J. Appl. Phys., vol. 73, no. 5, pp. 2338-2342, Mar. 1993.