Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2340-2343

  Li, C X ^a   Lai, P T ^a   Xu, J P ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Capacitance voltage characterization; Ge MOS; High k dielectric; Pretreatment

Indexed keywords

CARRIER CONCENTRATION; GATE DIELECTRICS; INTERFACES (MATERIALS); RELIABILITY THEORY; SEMICONDUCTING GERMANIUM; SURFACE TREATMENT;

CAPACITANCE-VOLTAGE CHARACTERIZATION; ELECTRICAL STRESS; FLAT-BAND VOLTAGE; HIGH-K DIELECTRIC;

MOS CAPACITORS;

EID: 34248669598     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.049     Document Type: Article

References (11)

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