Dopant penetration studies through Hf silicate

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Quevedo Lopez, M A ^a,b   Visokay, M R ^b   Chambers, J J ^b   Bevan, M J ^b   LiFatou, A ^b   Colombo, L ^b   Kim, M J ^c   Gnade, B E ^c   Wallace, R M ^c  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANTS; INTERDIFFUSION; OUTDIFFUSION; PLASMA NITRIDATION;

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DIFFUSION; DOPING (ADDITIVES); GRAIN BOUNDARIES; NITRIDING; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; POLYSILICON; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 13744260136     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1846138     Document Type: Article

References (43)

1. Semiconductor Industry Association Roadmap (Semiconductor Industry Association, San Jose, CA, 1999, 2000 update); http//public.itrs.net
2. T. Aoyama, K. Susuki, H. Tashiro, Y. Toda, T. Yamazaki, K. Takasaki, and T. Ito, J. Appl. Phys. 77, 417 (1995).
3. D. Mathiot, A. Straboni, E. Andre, and P. Debenest, J. Appl. Phys. 73, 8215 (1993).
4. T. Aoyama, K. Susuki, H. Tashiro, Y. Toda, Y. Arimoto, and T. Ito, J. Electrochem. Soc. 140, 3624 (1993).
5. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
6. T. Hori, Gate Dielectrics and MOS ULSI's (Springer, New York, 1997).
7. S. V. Hattangady, R. Kraft, D. T. Grider, M. A. Douglas, G. A. Brown, P. A. Tiner, J. W. Kuehne, P. E. Nicollian, and M. F. Pas, Tech. Dig. - Int. Electron Devices Meet. 1996, 495.
8. S. V. Hattangady, H. Niimi, and G. Lucovsky, Appl. Phys. Lett. 66, 3495 (1995).
9. Y. Wu, H. Niimi, H. Yang, G. Lucovsky, and R. B. Fair, J. Vac. Sci. Technol. B 17, 1813 (1999).
10. Y. Wu and G. Lucovsky, Microelectron. Reliab. 39, 365 (1999).
11. For example, see R. M. Wallace and Y. Wei, J. Vac. Sci. Technol. B 17, 970 (1999).
12. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
13. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
14. M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, and L. Colombo, Appl. Phys. Lett. 79, 4192 (2001).
15. R. M. Wallace, R. A. Stolz, and G. D. Wilk, U.S. Patent Nos. 6,013,553 (2000); 6,020,243 (2000); 6,291,866 (2001); 6,291,867 (2001).
16. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80, 3183 (2002).
17. D. G. Park, H. Cho, I. S. Yeo, J. A. Roh, and J. M. Hwang, Appl. Phys. Lett. 77, 2207 (2000).
18. K. Onishi, L. Kang, R. Choi, H. J. Cho, S. Gopalan, R. Nieh, E. Dharmarajan, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2001, 659.
19. S. Jeon, C.-J. Choi, T.-Y. Seong, and H. Hwang, Appl. Phys. Lett. 79, 245 (2001).
20. M. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 81, 1074 (2002).
21. M. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 81, 1609 (2002).
22. M. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 82, 4669 (2003); 83, 1679 (2003).
23. M. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 82, 4669 (2003); 83, 1679 (2003).
24. C. T. Sah, H. Sello, and D. A. Tremere, J. Phys.: Condens. Matter 11, 288 (1989).
25. K. S. Krisch, M. L. Green, F. H. Baumann, D. Brasen, L. C. Feldman, and L. Machanda, IEEE Trans. Electron Devices 43, 982 (1996).
26. J. F. Ziegler, J. P. Biersack, and U. Zittmark, The Stopping Range of Ions in Solids (Pergamon, New York, 1996), see also the program SRIM at http://www.srim.org
27. J. F. Ziegler, J. P. Biersack, and U. Zittmark, The Stopping Range of Ions in Solids (Pergamon, New York, 1996), see also the program SRIM at http://www.srim.org
28. I. Banerjee and D. Kuzminov, Appl. Phys. Lett. 62, 1541 (1993).
29. I. Banerjee and D. Kuzminov, J. Vac. Sci. Technol. B 12, 205 (1994).
30. M. A. Quevedo-Lopez, M. El-Bouanani, R. M. Wallace, and B. E. Gnade, J. Vac. Sci. Technol. A 20, 1891 (2002).
31. M. Navi and S. T. Dunham, Appl. Phys. Lett. 72, 2111 (1998).
32. W. R. Runyan and K. E. Bean, Semiconductor Integrated Circuit Processing Technology (Addison Wesley, Reading, MA, 1994).
33. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, R. Kuan, L. Tsung, M. Douglas, M. J. Bevan, H. Bu, A. Shanaware, and L. Colombo, Proceedings of AVS 3rd Int. Conf. On Microelectronics and Interfaces, Santa Clara, CA, March 2002, p. 127.
34. K. A. Ellis and R. A. Buhram, Appl. Phys. Lett. 74, 967 (1999).
35. R. B. Fair and R. A. Gafiteanu, IEEE Electron Device Lett. 17, 497 (1996).
36. K. A. Ellis and R. A. Buhrman, J. Electrochem. Soc. 145, 2068 (1998).
37. R. B. Fair, J. Electrochem. Soc. 144, 708 (1997).
38. G. Charitat and A. Martinez, J. Appl. Phys. 55, 2869 (1984).
39. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
40. H. Bracht, MRS Bull. 25, 22 (2000).
41. M. J. Bevan, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, H. Bu, A. Shanware, D. E. Mercer, R. T. Laaksonen and L. Colombo (private communication).
42. T. Matsuura, J. Murota, N. Mikoshiba, I. Kawashima, and T. Sawai, J. Electrochem. Soc. 138, 3474 (1991).
43. T. Aoyama, H. Tashiro, and K. Suzuki, J. Electrochem. Soc. 146, 1879 (1999).