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Journal of Physics D: Applied Physics

Volumn 42, Issue 18, 2009, Pages

Twin-free (1 1 1)-oriented epitaxial Nd2Hf2O 7 thin films on Ge(1 1 1) for high-k dielectrics

(3) Wei, Feng a Tu, Hailing a Du, Jun a

a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; FLUORITE PHASE; HIGH DIELECTRIC CONSTANT (HIGH-K); HIGH-K DIELECTRIC; INTERFACIAL LAYER; SMOOTH INTERFACE; TWIN-FREE;

CERAMIC CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; DIELECTRIC WAVEGUIDES; DIFFRACTION; ELECTRIC PROPERTIES; GERMANIUM; HAFNIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NEODYMIUM; PERMITTIVITY; PHASE INTERFACES; PULSED LASER DEPOSITION; THIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70149102875 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/42/18/185301 Document Type: Article

Times cited : (16)

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