Field-effect transistors with SrHfQ3 as gate oxide

Applied Physics Letters

Volumn 89, Issue 5, 2006, Pages

  Rossel, C ^a   Mereu, B ^a   Marchiori, C ^a   Caimi, D ^a   Sousa, M ^a   Guiller, A ^a   Siegwart, H ^a   Germann, R ^a   Locquet, J P ^a   Fompeyrine, J ^a   Webb, D J ^a   Dieker, Ch ^b   Seo, Jin Won ^b  

^a IBM RESEARCH ZURICH   (Switzerland)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRON TRAPS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OXIDES; STRONTIUM COMPOUNDS;

CHANNEL MOBILITY; EQUIVALENT OXIDE THICKNESS (EOT); GATE DIELECTRIC; GATE OXIDES;

FIELD EFFECT TRANSISTORS;

EID: 33748475725     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2236464     Document Type: Article

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