Improvements on surface carrier mobility and electrical stability of MOSFETs using HfTaO gate dielectric

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 2154-2160

  Yu, Xiongfei ^a   Zhu, Chunxiang ^a   Yu, Mingbin ^b   Kwong, Dim Lee ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

Crystallization temperature; Electrical stability; HfO2; HfTaO; High K; Interface states density (Dit); Mobility; MOSFET; Vth shift

Indexed keywords

CARRIER MOBILITY; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); TEMPERATURE; THRESHOLD VOLTAGE;

CRYSTALLIZATION TEMPERATURE; ELECTRICAL STABILITY; INTERFACE STATES DENSITY;

MOSFET DEVICES;

EID: 10644249184     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.839114     Document Type: Article

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