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Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

Composition dependence of band alignment and dielectric constant for Hf1-xTixO2 thin films on Si (100)

(7) Ye, Cong a Wang, Hao a Zhang, Jun a Ye, Yun a Wang, Yi a Wang, Baoyuan a Jin, Yingchun a

a HUBEI UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BAND GAPS; BAND OFFSETS; COMPOSITION DEPENDENCE; DIELECTRIC CONSTANTS; EQUIVALENT OXIDE THICKNESS; LOW-LEAKAGE CURRENT; SI(1 0 0); TI CONTENT; TIO;

ALIGNMENT; FILM THICKNESS; HAFNIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; SILICON; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952987699 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3380588 Document Type: Article

Times cited : (40)

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