Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (1 0 0)

Surface Science

Volumn 576, Issue 1-3, 2005, Pages 67-75

  He, G ^a   Liu, M ^a   Zhu, L Q ^a   Chang, M ^a   Fang, Q ^a,b   Zhang, L D ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Hafnium oxide; High k dielectric; Interfacial layer; Postdeposition annealing; XPS

Indexed keywords

BINDING ENERGY; HAFNIUM COMPOUNDS; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SILICON; STOICHIOMETRY; STRUCTURE (COMPOSITION); SURFACE TENSION; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM OXIDE; HIGH-K DIELECTRICS; INTERFACIAL LAYERS; POSTDEPOSITION ANNEALING;

THIN FILMS;

EID: 12444251122     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.11.042     Document Type: Article

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