Optical and electrical properties of plasma-oxidation derived HfO 2 gate dielectric films

Applied Surface Science

Volumn 253, Issue 7, 2007, Pages 3413-3418

  He, G ^a   Zhu, L Q ^a   Liu, M ^a   Fang, Q ^a,b   Zhang, L D ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

HfO 2 thin films; High k gate dielectrics; Interfacial layer; Optical properties; Plasma oxidation

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELLIPSOMETRY; OPTICAL PROPERTIES; OXIDATION; SPECTROSCOPIC ANALYSIS; SPUTTERING; THIN FILMS; X RAY DIFFRACTION;

HIGH-K GATE DIELECTRICS; INTERFACIAL LAYER; PLASMA OXIDATION; SIMULATED SPECTRA; TAUC-LORENTZ DISPERSION;

DIELECTRIC FILMS;

EID: 33846324773     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.07.055     Document Type: Article

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