Thermal stability of HfTaON films prepared by physical vapor deposition

Journal of Semiconductors

Volumn 30, Issue 2, 2009, Pages

  Xu, Gaobo ^a   Xu, Qiuxia ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

HfTaON; Interfacial layer; Physical vapor deposition; Thermal stability

Indexed keywords

ELECTRONIC MICROSCOPES; EQUIVALENT OXIDE THICKNESS; HFTAON; HIGH RESOLUTION; HIGH TEMPERATURE; INTERFACIAL LAYER; PHYSICAL THICKNESS; POST DEPOSITION ANNEALING; SI SUBSTRATES; THERMAL STABILITY;

BUFFER LAYERS; FILM PREPARATION; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; OXYGEN; SILICON; SILICON COMPOUNDS; SUBSTRATES; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

PHYSICAL VAPOR DEPOSITION;

EID: 63049093048     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/30/2/023002     Document Type: Article

References (17)

1. Houssa M, Pantisano L, Ragnarsson L Å, et al 2006 Electrical properties of high-k gate dielectrics: challenges, current issues, and possible solutions Mater Sci Eng R 51 37
2. Robertson J 2004 High dielectric constant oxides The European Phys. J. Appl. Phys. 28 265
3. 2 gate dielectrics on n-germanium Chin Phys 16 (01) 0245
4. 2 gate dielectrics for future generation of CMOS device application Chinese J. Semiconductors 25 (10) 1194
5. Yu Xiongfei, Zhu Chunxiang, Yu Mingbin, et al 2004 Improvements on surface carrier mobility and electrical stability of MOS-FETs using HfTaO gate dielectric IEEE Trans Electron Devices 51 (12) 2154
6. 2 gate stack with high mobility and low leakage current for low-standby-power application IEEE Electron Device Lett 27 (6) 498
7. Xu Qiuxia, Qian He, Han Zhengsheng, et al 2004 Characterization of 1.9- and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate IEEE Trans Electron Devices 51 (1) 113
8. 2 thin films grown by plasma atomic layer deposition Appl Phys Lett 87 053108
9. 2 and Si by high concentration ozone Appl Phys Lett 88 072903
10. Wilk G D, Wallace R M, Anthony J M 2000 Hafnium and zirconium silicates for advanced gate dielectrics J. Appl Phys 87 484
11. 2 gate dielectric and TaN metal gate with excellent performances for low standby power application Int. Electron Devices Meeting
12. 2 particles Microelectron Eng 70 93
13. 2 gate dielectric Appl Phys Lett 88 192103
14. y studied by photoemission and X-ray absorption spectroscopy Appl Phys Lett 87 182908
15. Cho M H, Chung K B, Moon D W 2006 Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma Appl Phys Lett 89 182908
16. y gate dielectrics prepared by reactive sputtering Appl Phys Lett 84 (9) 1588
17. 2/Si film fabricated by sputtering Appl Phys Lett 89 142907