Hf 1-x Si x O y dielectric films deposited by UV-photo-induced chemical vapour deposition (UV-CVD)

Applied Surface Science

Volumn 253, Issue 19, 2007, Pages 7869-7873

  Liu, M ^c   Zhu, L Q ^c   He, G ^c   Wang, Z M ^b   Wu, J X ^b   Zhang, J Y ^b   Liaw, I ^d   Fang, Q ^a   Boyd, Ian W ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c INSTITUTE OF SOLID STATE PHYSICS   (China)

^d NONE

Author keywords

CMOS technology; Hf 1 x Si x O y films; HfO 2 Si interface; High k dielectrics; UV photo induced chemical vapour deposition (UV CVD)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM COMPOUNDS; REFRACTIVE INDEX; SILICON; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

CMOS TECHNOLOGY; EXCIMER LAMPS; HIGH-K DIELECTRICS;

DIELECTRIC FILMS;

EID: 34447339126     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.02.150     Document Type: Article

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