Nanoscale transport properties at silicon carbide interfaces

Journal of Physics D: Applied Physics

Volumn 43, Issue 22, 2010, Pages

  Roccaforte, F ^a   Giannazzo, F ^a   Raineri, V ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING BLOCKES; CHANNEL MOBILITY; CURRENT STATUS; ELECTRONIC TRANSPORT; FUNDAMENTAL RESEARCH; KEYPOINTS; MATERIAL QUALITY; NANO SCALE; POWER ELECTRONIC DEVICES; SIC DEVICES; SIC POLYTYPES; SILICON TECHNOLOGIES; SURFACES AND INTERFACES; THEORETICAL LIMITS; WIDE-BAND-GAP SEMICONDUCTOR;

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC POWER SYSTEMS; ELECTRON DEVICES; ENERGY EFFICIENCY; NANOSTRUCTURED MATERIALS; SILICON CARBIDE; TRANSPORT PROPERTIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952842202     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/22/223001     Document Type: Review

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