Inhomogeneities in Ni4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Ewing, D J ^a   Porter, L M ^a   Wahab, Q ^b   Ma, X ^c   Sudharshan, T S ^d   Tumakha, S ^e   Gao, M ^e   Brillson, L J ^e  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b LINKÖPING UNIVERSITY   (Sweden)

^c MaxMile Technologies LLC   (United States)

^d University of South Carolina   (United States)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FERMI LEVEL; NICKEL COMPOUNDS; OPTICAL MICROSCOPY; SILICON CARBIDE;

CATHODOLUMINESCENCE SPECTRA; DEFECT STATES; FERMI LEVEL PINNING; POLARIZED LIGHT MICROSCOPY;

SCHOTTKY BARRIER DIODES;

EID: 34250637966     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2745436     Document Type: Article

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