Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 2992-2998

  Lazar, M ^a   Raynaud, C ^a   Planson, D ^a   Chante, J P ^a   Locatelli, M L ^b   Ottaviani, L ^c   Godignon, Ph ^d  

^a UNIVERSITÉ DE LYON   (France)

^b CNRS   (France)

^c AIX MARSEILLE UNIVERSITY   (France)

^d INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DOPING (ADDITIVES); ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

REVERSE POLARIZATION;

THIN FILMS;

EID: 0141831098     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1598631     Document Type: Article

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