Recent advances in (0001) 4H-SiC MOS device technology

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1275-1280

  Das, M K ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Channel Mobility; Interface States; MOS; MOSFETs; Nitridation; Oxide Reliability

Indexed keywords

ANNEALING; MORPHOLOGY; MOS DEVICES; MOSFET DEVICES; OPTIMIZATION; PASSIVATION;

CHANNEL MOBILITY; INTERFACE STATES; NITRIDATION; OXIDE RELIABILITY;

SILICON CARBIDE;

EID: 4444300180     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1275     Document Type: Conference Paper

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