4H-SiC Schottky barrier diodes using Mo-, Ti- and Ni-based contacts

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 647-650

  Perrone, D ^a,b   Naretto, M ^a,b   Ferrero, S ^a   Scaltrito, L ^a   Pirri, C F ^a  

^a POLITECNICO DI TORINO   (Italy)

^b Materials and Microsystems Laboratory   (Italy)

Author keywords

4H SiC power devices; Electrical characterization; Schottky barrier height; Schottky diodes

Indexed keywords

CAPACITANCE; ELECTRIC CONTACTORS; MOLYBDENUM; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DIODES; SILICON CARBIDE; SILICON WAFERS; TITANIUM COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS;

CAPACITANCE-VOLTAGE TECHNIQUES; ELECTRICAL CHARACTERIZATION; METAL SEMICONDUCTOR INTERFACE; POWER DEVICES; RAPID THERMAL ANNEALING PROCESS; SCHOTTKY BARRIER DIODES (SBDS); SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES;

SCHOTTKY BARRIER DIODES;

EID: 77951737119     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.647     Document Type: Conference Paper

References (8)

1. J. Millán, P. Godignon, and D. Tournier: Proc. Int. Conf. Microelectronics, Vol. 1 (2004), p. 23.
2. A. Itoh, T. Kimoto and H. Matsunami: Inst. Phys. Conf. Ser. No. 142, (Bristol, UK) (1996), p. 689.
3. A. Itoh, T. Kimoto and H. Matsunami: IEEE Electr. Dev. Lett. Vol. 16 (6) (1995), p. 280 doi:10.1109/55.790735.
4. M. Furno, F. Bonani, G. Ghione, S. Ferrero, S. Porro, P. Mandracci, L. Scaltrito, D. Perrone, G. Richieri and L. Merlin: Mat. Sci. Forum, Vol. 483-485 (2005), p. 941 doi:10.4028/www.scientific.net/MSF.483-485.941.
5. R. Yakimova, C. Hemmingsson, M. F. Macmillan, T. Yakimov, E. Janzen: J. Electr. Mat. Vol. 27 (7) (1998), p. 871 doi:10.1007/s11664-998-0112-5.
6. T. Nakamura, T. Miyanagi, I. Kamata, T. Jikimoto, H. Tsuchida: IEEE Electr. Dev. Lett., Vol. 26 (2) (2005), p. 99 doi:10.1109/LED.2004.841473. (Pubitemid 40210952)
7. R. Weiss, L. Frey, H. Ryssel: Appl. Surf. Science, Vol. 184 (2001), p. 41 doi:10.1016/S0169-4332(01)00527-X. (Pubitemid 34011600)
8. P. Colombi, E. Bontempi, U. M. Meotto, S. Porro, C. Ricciardi, L. Scaltrito, S. Ferrero, G. Richieri, L. Merlin and L. E. Depero: Mat. Sci. and Eng. B Vol. 114-115 (2004), p. 236 doi:10.1016/j.mseb.2004.07.071.