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Volumn 96, Issue 1, 2004, Pages 224-228

Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC (0001)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; GRAPHITE; HALL EFFECT; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; PHOSPHORUS; POSITIVE IONS; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 3142675183     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1756213     Document Type: Article
Times cited : (169)

References (14)
  • 2
    • 0042911006 scopus 로고
    • University of South Carolina Press, Columbia, S. C.
    • Yu A. Vodakov and E. N. Mokhov, Silicon Carbide 1973 (University of South Carolina Press, Columbia, S. C., 1974), p. 508.
    • (1973) Silicon Carbide , pp. 508
    • Vodakov, Yu.A.1    Mokhov, E.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.