Effect of plasma etching and sacrificial oxidation on 4H-SiC Schottky barrier diodes

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Morrison, D J ^a   Pidduck, A J ^b   Moore, V ^b   Wilding, P J ^b   Hilton, K P ^b   Uren, M J ^b   Johnson, C M ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; INTERFACES (MATERIALS); MESFET DEVICES; METALLIZING; OXIDATION; PLASMA ETCHING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

SACRIFICIAL OXIDATION;

SILICON CARBIDE;

EID: 0033725857     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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