Analysis of inhomogeneous Ge/SiC heterojunction diodes

Journal of Applied Physics

Volumn 106, Issue 9, 2009, Pages

  Gammon, P M ^a   Prez Tomas A ^b   Shah, V A ^a   Roberts, G J ^a   Jennings, M R ^a   Covington, J A ^a   Mawby, P A ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CONTACT; BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; CIRCULAR TRANSMISSION LINE; CONTACT AREAS; CURRENT-VOLTAGE PLOTS; HETEROJUNCTION DIODES; IDEALITY FACTORS; RICHARDSON CONSTANT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BEHAVIORS; SMALL AREA; STANDARD DEVIATION; TEMPERATURE DEPENDENT; VARYING TEMPERATURE;

EXTRACTION; GERMANIUM; HETEROJUNCTIONS; METAL RECOVERY; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; SMELTING; STANDARDIZATION;

SCHOTTKY BARRIER DIODES;

EID: 70450263252     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3255976     Document Type: Article

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