"Carbon cluster model" for electronic states at SiC/SiO2 interfaces

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1472-1475

  Bassler, M ^a   Pensl, G ^a   Afanas'ev, V ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Carbon cluster model; Density of interface states; MOS structure; SiC SiO2 interface

Indexed keywords

EID: 0000231874     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(97)00074-5     Document Type: Article

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