Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 375-378

  Raineri, V ^a   Calcagno, L ^b   Giannazzo, F ^b   Goghero, D ^a   Musumeci, F ^a   Roccaforte, F ^a   La Via, F ^a  

^a CNR IMM   (Italy)

^b INFM   (Italy)

Author keywords

Dopant Activation; Ion Implantation; Scanning Capacitance Microscopy

Indexed keywords

ANNEALING; CAPACITANCE; CARRIER CONCENTRATION; HEAT TREATMENT; ION IMPLANTATION; NITROGEN;

SCANNING CAPACITANCE MICROSCOPY;

SILICON CARBIDE;

EID: 18744430382     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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