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Applied Physics Letters

Volumn 79, Issue 3, 2001, Pages 323-325

Physical properties of N2O and NO-nitrided gate oxides grown on 4H SiC

(2) Jamet, P a Dimitrijev, S a

a GRIFFITH UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; INTERFACES (MATERIALS); NITROGEN OXIDES; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

NITRIDATION;

SEMICONDUCTOR GROWTH;

EID: 0035898353 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1385181 Document Type: Article

Times cited : (141)

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