Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

Semiconductor Science and Technology

Volumn 20, Issue 3, 2005, Pages 271-278

  Vassilevski, K V ^a   Wright, N G ^a   Nikitina, I P ^a,b   Horsfall, A B ^a   O'Neill, A G ^a   Uren, M J ^c   Hilton, K P ^c   Masterton, A G ^c   Hydes, A J ^c   Johnson, C M ^d  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

^c QINETIQ   (United Kingdom)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; ETCHING; GRAPHITE; HYDROGENATION; NANOSTRUCTURED MATERIALS; PHOTORESISTORS; PLASTIC FILMS; SCHOTTKY BARRIER DIODES; SILICON WAFERS;

EPITAXIAL STRUCTURES; EPITAXIAL WAFERS; GRAPHITE CAPPING LAYER; POST-IMPLANTATION ANNEALING;

SILICON CARBIDE;

EID: 20044388710     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/3/003     Document Type: Article

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