Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Brauer, G ^a   Anwand, W ^a   Skorupa, W ^a   Brandstetter, S ^b   Teichert, C ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF LEOBEN   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; WAFER SURFACE;

ALUMINUM; ANNEALING; ATOMIC FORCE MICROSCOPY; BORON; CHARACTERIZATION; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; MORPHOLOGY; POSITIVE IONS; POSITRON ANNIHILATION SPECTROSCOPY; SILICON WAFERS; SURFACE STRUCTURE;

SILICON CARBIDE;

EID: 31744452137     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2161940     Document Type: Article

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