High-Voltage Ni- And Pt-SiC Schottky Diodes Utilizing Metal Field Plate Termination

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 456-464

  Saxena, Vik ^a,b   Nong, Jian ^c   Steckl, Andrew J ^d  

^a IEEE   (United States)

^b University of Cincinnati   (United States)

^c NOKIA RESEARCH CENTER   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

Power devices; Schottky diodes; Silicon carbide

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; NICKEL; OHMIC CONTACTS; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; TEMPERATURE MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

METAL FIELD PLATES;

SCHOTTKY BARRIER DIODES;

EID: 0033097465     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748862     Document Type: Article

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