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Volumn 91, Issue 3, 2007, Pages

Observation of a two dimensional electron gas formed in a polarization doped C -face 3C4H SiC heteropolytype junction

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC POLARIZATION; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CURRENT MEASUREMENT; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THERMAL EFFECTS;

EID: 34547217887     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2754650     Document Type: Article
Times cited : (25)

References (26)
  • 25
    • 0004733518 scopus 로고
    • EMIS Datareviews Series No. 13, edited by G.Harris (Inspec, London
    • Properties of Silicon Carbide, EMIS Datareviews Series No. 13, edited by, G. Harris, (Inspec, London, 1995), pp. 29-41.
    • (1995) Properties of Silicon Carbide , pp. 29-41


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.