Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Severino, A ^a,b   D'Arrigo, G ^a   Bongiorno, C ^a   Scalese, S ^a   La Via, F ^a   Foti, G ^b  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CARBONIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; STATISTICAL METHODS; TRANSMISSION ELECTRON MICROSCOPY;

EMPIRICAL MODEL; SILICON SURFACE; VOIDS;

SILICON CARBIDE;

EID: 34547588851     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2756620     Document Type: Article

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