Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET

IEEE Transactions on Electron Devices

Volumn 55, Issue 4, 2008, Pages 961-967

  Moscatelli, Francesco ^a   Poggi, Antonella ^a   Solmi, Sandro ^a   Nipoti, Roberta ^a  

^a CNR Consiglio Nazionale delle Ricerche   (Italy)

Author keywords

Electron mobility; MOSFET; Nitrogen implantation

Indexed keywords

ELECTRON MOBILITY; ELECTRON TRAPS; ION IMPLANTATION; NITROGEN; SILICON CARBIDE; THERMOOXIDATION; THRESHOLD VOLTAGE;

ELECTRON CHANNEL MOBILITY; INTERFACE ELECTRON TRAPS; NITROGEN ION IMPLANTATION;

MOSFET DEVICES;

EID: 42049117847     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.917107     Document Type: Article

References (31)

1. 2: Energy level of a negatively charged state," Appl. Phys. Lett., vol. 71, no. 26, pp. 3844-3846, Dec. 1997.
2. C. Raynaud, "Silica films on silicon carbide: A review of electrical properties and device applications," J. Non-Cryst. Solids, vol. 280, no. 1, pp. 1-31, Feb. 2001.
3. 2 oxidation ambient," Mater. Sci. Forum, vol. 527-529, pp. 979-982, 2006.
4. 2O nitrided oxides grown on Si and SiC substrates," Microelectron. Reliab., vol. 39, no. 4, pp. 441-449, Apr. 1999.
5. 2 interface with nitric oxide," Mater. Sci. Forum, vol. 389-393, pp. 967-972, 2002.
6. 2 interface properties by nitridation," Appl. Phys. Lett., vol. 82, no. 4, pp. 568-570, 2003.
7. 2O," Solid State Electron., vol. 49, no. 6, pp. 896-901, Jun. 2005.
8. M. K. Das, "Recent advances in (0001) 4H-SiC MOS device technology," Mater. Sci. Forum, vol. 457-460, pp. 1275-1280, 2004.
9. G. Gudjonsson, H. O. Olafsson, F. Allerstam, P.-A. Nilsson, E. O. Sveinbjornsson, H. Zirath, T. Rodle, and R. Jos, "High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material," IEEE Electron Device Lett., vol. 26, no. 2, pp. 96-98, 2005.
10. G. Gudjonsson, H. O. Olafsson, F. Allerstam, P.-A. Nilsson, E. O. Sveinbjornsson, T. Rodle, and R. Jos, "Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminum ion-implanted material," Mater. Sci. Forum, vol. 483-485, pp. 833-836, 2005.
11. E. O. Sveinbjornsson, G. Gudjonsson, F. Allerstam, H. O. Olafsson, P.-A. Nilsson, H. Zirath, T. Rodle, and R. Jos, "High channel mobility 4H-SiC MOSFETs," Mater. Sci. Forum, vol. 527-29, pp. 961-966, 2006.
12. F. Ciobanu, G. Pensl, V. V. Afanas'ev, and A. Schoner, "Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation," Mater. Sci. Forum, vol. 483-485, pp. 693-696, 2005.
13. G. Pensl, F. Ciobanu, T. Frank, D. Kirfmse, M. Krieger, S. Reshanov, F. Schmid, M. Weidner, T. Oshima, H. Rob, and W. J. Choyke, "Defect-engineering in SiC by ion implantation and electron irradiation," Microelectron. Eng., vol. 83, no. 1, pp. 146-149, Jan. 2006.
14. 2-intertaces," Mater. Sci. Forum, vol. 521-529, pp. 991-994, 2006.
15. A. Poggi, F. Moscatelli, Y. Hijikata, S. Solmi, and R. Nipoti, "MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with nitrogen," Microelectron. Eng., vol. 84, no. 12, pp. 2804-2809, Dec. 2007.
16. A. Poggi, F. Moscatelli, Y. Hijikata, S. Solmi, M. Sanmartin. F. Tamarri, and R. Nipoti, "Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose," Mater. Sci. Forum, vol. 556-557, pp. 639-642, 2007.
17. Y. Hijikata, S. Yoshida, F. Moscatelli, A. Poggi, S. Solmi, S. Cristiani, and R. Nipoti, "Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation," Mater. Sci. Forum, vol. 556-557, pp. 651-654, 2007.
18. SRIM2003. [Online]. Available: http://www.srim.org
19. R. Nipoti, A. Parisini, and A. Poggi, "Low-temperature thermal oxidation of ion-amorphized 6H-SiC," Mater. Sci. Forum, vol. 389-393, pp. 1109-1112, Jun. 2002.
20. A. Poggi, R. Nipoti, S. Solmi, M. Barozzi, and L. Vanzetti, "Low temperature oxidation of SiC preamorphized by ion implantation," J. Appl. Phys., vol. 95, no. 11, pp. 6119-6191, Jun. 2004.
21. M. R. Melloch and J. A. Cooper, "Fundamentals of SiC-based device processing," MRS Bull., vol. 22, no. 3, pp. 42-47, Mar. 1997.
22. A. Poggi, A. Parisini, R. Nipoti, and S. Solmi, "Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes," Appl. Phys. Lett., vol. 86, no. 12, p. 121 907, Mar. 2005.
23. F. Moscatelli, A. Scorzoni, A. Poggi, G. C. Cardinali, and R. Nipoti, "Improved electrical characterization of Al-Ti ohmic contacts on p-type ion implanted 6H-SiC," Semicond. Sci. Technol., vol. 18. no. 6, pp. 554-559, Jun. 2003.
24. S. Harada, R. Kosugi, J. Senzaki, S. Suzuki, W. J. Cho, K. Fukuda, and K. Arai, "Temperature dependences of channel mobility and threshold voltage in 4H - and 6H-SiC MOSFETs," in Proc. Mater. Res. Soc. Symp. 2001, vol. 640, p. H5.37.
25. S. Harada, R. Kosugi, J. Senzaki, W. J. Cho, K. Fukuda, K. Arai, and S. Suzuki, "Relationship between channel mobility and interface state density in SiC metal-oxide-semiconductor field-effect transistor," J. Appl. Phys., vol. 91, no. 3. pp. 1568-1571, Feb. 2002.
26. A. Perez-Tomas, P. Godignon, N. Mestres, and J. Millan, "A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface," Microelectron. Eng., vol. 83, no. 3, pp. 440-445, Mar. 2006.
27. S.-H. Ryu, K. T. Kornegay, J. A. Cooper, and M. R. Melloch, "Digital CMOS ICs in 6H-SiC operating on a 5-V power supply," IEEE Trans. Electron Devices, vol. 45, no. 1, pp. 45-53, Jan. 1998.
28. A. Perez-Tomas, P. Brosselard, P. Godignon, J. Millan, N. Mestres, M. R. Jennings, J. A. Covington, and P. A. Mawby, "Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors," J. Appl. Phys., vol. 100, no. 11, p. 114 508, Dec. 2006.
29. 2/4H-SiC interface," IEEE Trans. Electron Devices, vol. 50, no. 7, pp. 1582-1500, Jul. 2003.
30. N. S. Rebello, F. S. Shoucair, and J. W. Palmour, "6H silicon carbide MOSFET modelling for high temperature analogue integrated circuits (25-500 °C)," Proc. Inst. Electr. Eng. - Circuit, Devices Systems vol. 143, no. 2, pp. 115-122, Apr. 1996.
31. Y. A. Zeng, M. H. White, and M. K. Das, "Electron transport modeling in the inversion layers of 4H and 6H-SiC MOSFETs on implanted regions," Solid State Electron., vol. 49, no. 6, pp. 1017-1028, Jun. 2005.